to-251 -3l plastic-encapsulate transistors b772 transistor (pnp) fea t ures lowspeed switching maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -6 v i c collector current -continuous -3 a p c collector power dissipation 1.25 w r ? ja thermal resistance, junction to ambient 100 /w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-100 a ,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 -6 v collector cut-off current i cbo v cb = -40v, i e =0 -1 a collector cut-off current i ceo v ce =-30v, i b =0 -10 a emitter cut-off current i ebo v eb =-6v, i c =0 -1 a dc current gain h fe v ce = -2v, i c = -1a 60 400 collector-emitter saturation voltage v ce(sat) i c =-2a, i b = -0.2a -0.5 v base-emitter saturation voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce = -5v, i c =-0.1a f = 10mhz 50 80 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 to-251 -3l 1. emitter 2. collector 3 base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2013
|
